Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Kubota, Masashi ^b,e   Onuma, Takeyoshi ^a,b,c   Ishihara, Yujiro ^d   Usui, Akira ^d   Uedono, Akira ^b   Chichibu, Shigefusa F ^a,b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d FURUKAWA CO LTD   (Japan)

^e ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD EMISSION BANDS; CONCENTRATION OF; CORE ELECTRONS; CRUCIAL FUNCTIONS; DEFECT CHEMISTRIES; DEFECT COMPLEXES; DEFECT CONCENTRATIONS; DOPING CONCENTRATIONS; DOPPLER BROADENING; ELECTRICAL RESISTIVITIES; ELECTRONIC DEVICES; FE-DOPED; FE-DOPING; FORMATION ENERGIES; HYDRIDE VAPOR PHASE EPITAXIES; MONOENERGETIC; OVERLAYERS; PHOTOLUMINESCENCE MEASUREMENTS; PL SPECTRUM; POSITRON ANNIHILATION MEASUREMENTS; POSITRON ANNIHILATION TECHNIQUES; POSITRON DIFFUSIONS; RELATIVE INTENSITIES; S PARAMETERS; SEMI-INSULATING; SEMI-INSULATING PROPERTIES; SHALLOW DONORS; SI SUBSTRATES; SPECTRAL REGIONS; SURFACE DECOMPOSITIONS; THERMAL STABILITIES; THERMALLY STABLES; UNCAPPED SURFACES; YELLOW LUMINESCENCE BANDS; ZERO-PHONON LINES;

CONCENTRATION (PROCESS); CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRONS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SURFACE DEFECTS; SURFACE DIFFUSION; THERMODYNAMIC STABILITY; VACANCIES;

GALLIUM ALLOYS;

EID: 65449159694     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3110205     Document Type: Article

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