Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Uedono, A ^a   Ito, K ^b   Nakamori, H ^c   Mori, K ^c   Nakano, Y ^c   Kachi, T ^c   Ishibashi, S ^c   Ohdaira, T ^c   Suzuki, R ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b Rd Management Section   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPPLER EFFECT; GALLIUM NITRIDE; ION IMPLANTATION; LIGHT; POSITRONS; SIMULATED ANNEALING;

ANNEALING PROPERTIES; ANNIHILATION RADIATION; MONOENERGETIC POSITRON BEAMS;

CRYSTAL DEFECTS;

EID: 35649024195     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2798586     Document Type: Article

References (34)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 0021-8979 10.1063/1.371145 86, 1 (1999).
2. S. O. Kucheyev, J. S. Williams, and P. J. Pearton, Mater. Sci. Eng.. 33, 51 (2001).
3. H. J. Lozykowski, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.17758 48, 17758 (1993), and references therein.
4. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 0036-8075 10.1126/science.287.5455.1019 287, 1019 (2000).
5. K. M. Yu, W. Walukiewicz, M. A. Scarpulla, O. D. Dubon, J. Wu, J. Jasinski, Z. L. Weber, J. W. Beeman, M. R. Pillai, and M. J. Aziz, J. Appl. Phys. 0021-8979 10.1063/1.1582393 94, 1043 (2003).
6. I. Usov, N. Parikh, Y. Kudriavtsev, R. Asomoza, Z. Reitmeier, and R. Davis, J. Appl. Phys. 0021-8979 10.1063/1.1564271 93, 5140 (2003).
7. Y. Nakano and T. Jimbo, J. Appl. Phys. 0021-8979 10.1063/1.1504500 92, 3815 (2002).
8. B. Pipeleers, S. M. Hogg, and A. Vantomme, J. Appl. Phys. 0021-8979 10.1063/1.2143120 98, 123504 (2005).
9. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors, Solid-State Sciences (Springer, Berlin, 1999), Vol. 127.
10. K. Saarinen, T. Suski, I. Grzegory, and D. C. Look, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.233201 64, 233201 (2001).
11. S. F. Chichibu, A. Setoguchi, A. Uedono, K. Yoshimura, and M. Sumiya, Appl. Phys. Lett. 0003-6951 10.1063/1.1337641 78, 28 (2001).
12. Y. Nakano and T. Kachi, J. Appl. Phys. 0021-8979 10.1063/1.1421627 91, 884 (2002).
13. J. Moxom, J. Xu, R. Suzuki, T. Ohdaira, G. Brandes, and J. S. Flynn, J. Appl. Phys. 0021-8979 10.1063/1.1492858 92, 1898 (2002).
14. A. Uedono, H. Bang, K. Horibe, S. Morishima, and K. Akimoto, J. Appl. Phys. 0021-8979 10.1063/1.1565171 93, 5181 (2003).
15. F. Tuomisto, K. Saarinen, T. Paskova, B. Monemar, M. Bockowski, and T. Suski, J. Appl. Phys. 0021-8979 10.1063/1.2180450 99, 066105 (2006).
16. S. Zeng, G. N. Aliev, D. Wolverson, J. J. Davies, S. J. Bingham, D. A. Abdulmalik, P. G. Coleman, T. Wang, and P. J. Parbrook, Appl. Phys. Lett. 0003-6951 10.1063/1.2220552 89, 022107 (2006).
17. S. Hautakangas, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, X. Xu, and D. C. Look, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.193301 73, 193301 (2006).
18. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
19. A. van Veen, H. Schut, J. de Vries, R. A. Hakvoort, and M. R. Ijpma, AIP Conf. Proc. 218, 171 (1990). 0094-243X
20. A. Uedono, T. Mori, K. Morisawa, K. Murakami, T. Ohdaira, R. Suzuki, T. Mikado, K. Ishioka, M. Kitajima, S. Hishita, H. Haneda, and I. Sakaguchi, J. Appl. Phys. 0021-8979 10.1063/1.1542923 93, 3228 (2003).
21. P. Asoka-Kumar, M. Alatalo, V. J. Ghosh, A. C. Kruseman, B. Nielsen, and K. G. Lynn, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.2097 77, 2097 (1996).
22. P. E. Blöchl, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.17953 50, 17953 (1994).
23. S. Ishibashi, T. Tamura, S. Tanaka, M. Kohyama, and K. Terakura (unpublished).
24. S. Ishibashi, Mater. Sci. Forum. 445-446, 401 (2004).
25. E. Boroński and R. M. Nieminen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.34.3820 34, 3820 (1986).
26. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77.3865 77, 3865 (1996).
27. R. Suzuki, T. Ohdaira, and T. Mikado, Radiat. Phys. Chem. 0969-806X 10.1016/S0969-806X(00)00226-7 58, 603 (2000).
28. P. Kirkegaard, M. Eldrup, O. E. Mogensen, and N. J. Pedersen, Comput. Phys. Commun. 0010-4655 10.1016/0010-4655(81)90006-0 23, 307 (1981).
29. A. Uedono, S. F. Chichibu, Z. Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai, and S. Nakamura, J. Appl. Phys. 0021-8979 10.1063/1.1372163 90, 181 (2001).
30. S. Limpijumnong and C. G. Van de Walle, Phys. Rev. B 0163-1829 10.1103/PhysRevB.69.035207 69, 035207 (2004).
31. M. Katsikini, K. Papagelis, E. C. Paloura, and S. Ves, J. Appl. Phys. 0021-8979 10.1063/1.1606521 94, 4389 (2003).
32. T. Mattila and R. M. Nieminen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.55.9571 55, 9571 (1997).
33. A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, Y. Aoki, M. Yoshikawa, and I. Nashiyama, J. Appl. Phys. 0021-8979 10.1063/1.371536 86, 5392 (1999).
34. A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, M. Yoshikawa, I. Nashiyama, T. Frank, and G. Pensl, J. Appl. Phys. 0021-8979 10.1063/1.373039 87, 4119 (2000).