Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Szlachetko, J ^a,d   Banas D ^a   Kubala Kukus A ^a   Pajek, M ^a   Cao, W ^b   Dousse, J Cl ^b   Hoszowska, J ^b   Kayser, Y ^b   Szlachetko, M ^b   Kavcic M ^c   Salome, M ^d   Susini, J ^d  

^a JAN KOCHANOWSKI UNIVERSITY   (Poland)

^b UNIVERSITY OF FRIBOURG   (Switzerland)

^c JO EF STEFAN INSTITUTE   (Slovenia)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT DETECTIONS; ELEMENTAL MAPPINGS; HIGH RESOLUTIONS; LATERAL RESOLUTIONS; PRE-CONCENTRATION TECHNIQUES; SEMICONDUCTOR NANOTECHNOLOGIES; VAPOR-PHASE DECOMPOSITIONS; X-RAY FLUORESCENCE METHODS; X-RAY FLUORESCENCES;

ELECTROMAGNETIC WAVES; FLUORESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SYNCHROTRON RADIATION; SYNCHROTRONS; THICKNESS MEASUREMENT;

SILICON WAFERS;

EID: 65449157364     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086658     Document Type: Article

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