Analysis of low Z elements on Si wafer surfaces with synchrotron radiation induced total reflection X-ray fluorescence at SSRL, Beamline 3-3: Comparison of droplets with spin coated wafers

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 58, Issue 12, 2003, Pages 2105-2112

  Streli, C ^a   Pepponi, G ^a   Wobrauschek, P ^a   Zoger N ^a   Pianetta, P ^b   Baur, K ^b   Pahlke, S ^c   Fabry, L ^c   Mantler, C ^c   Kanngiesser B ^d   Malzer, W ^d  

^a Atominst der Österr Univ   (Austria)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c SILTRONIC AG   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Low Z elements; Si wafer; Synchrotron radiation; Total reflection X ray fluorescence

Indexed keywords

ADSORPTION; FLUXES; IMPURITIES; MULTILAYERS; POLARIZATION; QUALITY CONTROL; SEMICONDUCTOR MATERIALS; SPIN COATING; SYNCHROTRON RADIATION; X RAY SPECTROSCOPY;

LOW ENERGY RADIATION; VAPOR PHASE DECOMPOSITION (VPD);

SILICON WAFERS;

EID: 0348221812     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(03)00218-0     Document Type: Conference Paper

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