Analysis of low Z elements on Si wafer surfaces with undulator radiation induced total reflection X-ray fluorescence at the PTB beamline at BESSY II

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 58, Issue 12, 2003, Pages 2113-2121

  Streli, C ^a   Pepponi, G ^a   Wobrauschek, P ^a   Beckhoff, B ^b   Ulm, G ^b   Pahlke, S ^c   Fabry, L ^c   Ehmann, Th ^c   Kanngiesser B ^d   Malzer, W ^d   Jark, W ^e  

^a Atominst der Österr Univ   (Austria)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c SILTRONIC AG   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e SINCROTRONE TRIESTE   (Italy)

Author keywords

Low Z elements; Raman scattering; SR TXRF; Thin layer analysis; TXRF; Wafer surface analysis

Indexed keywords

ABSORPTION; ELECTROMAGNETIC WAVE POLARIZATION; FLUORESCENCE; MULTILAYERS; NONDESTRUCTIVE EXAMINATION; PHOTONS; RAMAN SCATTERING; SURFACE TREATMENT; SYNCHROTRON RADIATION; X RAY SPECTROSCOPY;

THIN LAYER ANALYSIS; TOTAL REFLECTION X-RAY FLUORESCENCE (TXRF); WAFER SURFACE ANALYSIS;

SILICON WAFERS;

EID: 0347903923     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2003.05.008     Document Type: Conference Paper

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