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Physical Review Letters

Volumn 97, Issue 7, 2006, Pages

High-resolution study of X-ray resonant Raman scattering at the K edge of silicon

(9) Szlachetko, J a,c Dousse, J Cl a Hoszowska, J b Pajek, M c Barrett, R b Berset, M a Fennane, K a Kubala Kukus, A c Szlachetko, M a

a UNIVERSITY OF FRIBOURG (Switzerland)

b EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

c JAN KOCHANOWSKI UNIVERSITY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC EXCITATION; FLUORESCENCE; SILICON; X RAY SPECTROSCOPY;

K EDGE; KRAMERS HEISENBERG APPROACH; VALENCE BANDS; X-RAY RESONANT RAMAN SCATTERING;

RAMAN SCATTERING;

EID: 33747236084 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.97.073001 Document Type: Article

Times cited : (33)

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