Suicide-silicon Schottky barrier heights calculated using an interface-defect model

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2430-2432

  Kikuchi, Akira ^a  

^a HITACHI LTD   (Japan)

Author keywords

Interface defect model; Schottky barrier height; Transition metal suicide

Indexed keywords

CALCULATIONS; CRYSTAL DEFECTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON; SILICON COMPOUNDS; TRANSITION METALS;

SCHOTTKY BARRIER DIODES;

EID: 0032065770     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2430     Document Type: Article

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