Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Fan, Qian ^a   Leach, Jacob H ^a   Xie, Jinqiao ^a   Ozgur, Umit ^a   Morkoç, Hadis ^a   Zhou, L ^b   Smith, D J ^b  

^a Virginia Commonwealth University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; BAND GAPS; BARRIER CASE; CARRIER DISTRIBUTIONS; CHARGE NEUTRALIZATIONS; DINGER EQUATIONS; DONOR STATE; ELECTROMECHANICAL COUPLING EFFECTS; EXPERIMENTAL DATUM; EXPERIMENTAL OBSERVATIONS; GAIN INSIGHTS; GAN LAYERS; GAN-BASED HETEROSTRUCTURES; GROWTH INTERRUPTIONS; HETEROJUNCTION FIELD EFFECT TRANSISTORS; HETEROJUNCTION STRUCTURES; LATTICE-MATCHED; PIEZOELECTRIC POLARIZATIONS; SELF-CONSISTENT SOLUTIONS; SHEET DENSITIES; SPACER LAYERS; SPACER THICKNESS; THEORETICAL PREDICTIONS; TWO CHANNELS; UNI-AXIAL STRAINS;

ALUMINUM; ELECTROMECHANICAL DEVICES; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; POISSON DISTRIBUTION; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 65349155127     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.811678     Document Type: Conference Paper

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