Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures

Applied Physics A: Materials Science and Processing

Volumn 84, Issue 1-2, 2006, Pages 95-98

  Kong, Y C ^a   Zheng, Y D ^a   Zhou, C H ^a   Gu, S L ^a   Zhang, R ^a   Han, P ^a   Shi, Y ^a   Jiang, R L ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CARRIER CONCENTRATION; ELECTRON GAS; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

BARRIERS; INTERFACIAL LAYERS; TWO-DIMENSIONAL ELECTRON GAS (2DEG) DENSITY;

HETEROJUNCTIONS;

EID: 33646695494     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3600-6     Document Type: Article

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