Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in Al xGa 1-xN/GaN heterostructures

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Kim, T W ^a   Choo, D C ^a   Yoo, K H ^b   Jung, M H ^c   Cho, Y H ^d   Lee, Jae Hoon ^e   Lee, Jung Hee ^e  

^a Hanyang University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d Chungbuk National University   (South Korea)

^e Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC SUBBAND ENERGIES; HIGH-SPEED ELECTRONIC DEVICES; TWO-DIMENSIONAL ELECTRON GAS (2DEG); WAVE FUNCTIONS;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; FERMI LEVEL; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS; SHUBNIKOV-DE HAAS EFFECT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 20944451899     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1904152     Document Type: Article

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