Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 157-160

  Pimparkar, N ^a   Cao, Q ^b   Kumar, S ^a   Murthy, J Y ^a   Rogers, J ^b  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Carbon nanotube (NT); Inhomogeneous percolation theory; Network transistor; Thin film transistor (TFT)

Indexed keywords

BIAS CURRENTS; CARBON NANOTUBES; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; NETWORKS (CIRCUITS);

ARBITRARY GEOMETRICAL PARAMETERS; INHOMOGENEOUS PERCOLATION THEORY; NANOBUNDLE THIN-FILM TRANSISTOR (NB-TFT); SCALING FORMULA;

THIN FILM TRANSISTORS;

EID: 33847375038     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889219     Document Type: Article

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