Reduction of hysteresis characteristics in carbon nanotube field-effect transistors by refining process

IEICE Transactions on Electronics

Volumn E87-C, Issue 11, 2004, Pages 1795-1798

  Kamimura, Takafumi ^a,b   Matsumoto, Kazuhiko ^a,b,c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Carbon nanotube; Field effect transistor; Hysteresis; Refining process

Indexed keywords

AIR; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRODES; FABRICATION; HYSTERESIS; TRANSCONDUCTANCE;

DRAIN CURRENT; GATE VOLTAGE; HYSTERESIS CHARACTERISTICS; REFINING PROCESS;

FIELD EFFECT TRANSISTORS;

EID: 10444235603     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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