Capacitance-voltage characterization of fully silicided gated MOS capacitor

Journal of Semiconductors

Volumn 30, Issue 3, 2009, Pages

  Wang, Baomin ^a   Ru, Guoping ^a   Jiang, Yulong ^a   Qu, Xinping ^a   Li, Bingzong ^a   Liu, Ran ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

C V; FUSI; MOS capacitor model; Photonic high frequency C V

Indexed keywords

ACCURATE MEASUREMENT; C-V; C-V CHARACTERISTIC; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; DIELECTRIC THICKNESS; DISPLACEMENT CURRENTS; DISSIPATION FACTORS; FOUR-ELEMENT MODEL; FREQUENCY DISPERSION; FREQUENCY TECHNIQUES; FULL SILICIDATION; FULLY SILICIDED; FUSI; GATE OXIDE; HIGH-FREQUENCY C-V; INTERFACE TRAP DENSITY; LEAKAGE PROBLEMS; LOW FREQUENCY; MEASUREMENT ACCURACY; METAL-OXIDE- SEMICONDUCTORCAPACITORS; PARALLEL CONDUCTANCE; QUANTUM EFFECTS; QUASI-STATIC; REAL CAPACITANCE; SERIES MODEL; SERIES RESISTANCES; TUNNELING CURRENT;

CAPACITANCE; CAPACITORS; DISPERSIONS; MEASUREMENTS; QUANTUM ELECTRONICS; SILICIDES; SMELTING; SPACECRAFT; VOLTAGE DIVIDERS;

MOS CAPACITORS;

EID: 64749084492     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/3/034002     Document Type: Article

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