Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2032-2036

  Wang, Bao Min ^a   Ru, Guo Ping ^a   Jiang, Yu Long ^a   Qu, Xin Ping ^a   Li, Bing Zong ^a   Liu, Ran ^a  

^a ASIC and System   (China)

Author keywords

Flatband voltage (VFB); Fully silicided (FUSI); Interface trap; Metal gate; Work function (WF)

Indexed keywords

ELECTRIC RESISTANCE; ERBIUM; HOLMIUM; METALS; MODULATION; NICKEL ALLOYS; PAPER SHEETING; SILICON COMPOUNDS;

CRYSTALLINITY; FLATBAND VOLTAGE (VFB); FULLY SILICIDED (FUSI); FULLY SILICIDED GATES; FULLY SILICIDED METAL GATES; INTERFACE TRAP; METAL GATE; WORK FUNCTION (WF); WORK-FUNCTION;

NICKEL;

EID: 52149108478     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.025     Document Type: Article

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