Characterization of interface traps in MOS devices using photonic illumination method

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Lee, Young Wook ^a   Hong, Byungyou ^a   Roh, Yonghan ^a   Vikulov, Viktor A ^b  

^a Sungkyunkwan University   (South Korea)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

C V; Dit; Interface trap density; Photo I V

Indexed keywords

EID: 0037306757     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (12)

1. E. H. Nicollian and J. R. Brews, MOS physics and technology (Wiley, New York, 1982).
2. nded. (Wiley, New York, 1981).
3. H. Kobayashi, Y. Yamashita, Y. Nakato, T. Komeda and Y. Nishioka, Appl. Phys. Lett. 69, 2276 (1996).
4. V. K. Bhat, K. N. Bhat and A. Subrahmanyam, Solid State Electronics 45, 1127 (2001).
5. J. L. Zhang, J. S. Yuan, Y. Ma and A. S. Oates, Solid State Electronics 45, 373 (2001).
6. H. C. Kim, H. T. Kim, S. D. Cho, S. J. Song, Y. C. Kim, S. K. Kim, S. S. Chi, D. J. Kim and D. M. Kim, J. Korean Phys. Soc. 40, 64 (2002).
7. A. Ahaitouf, A. Bath, P. Thevenin and E. Abarkan, Material Science and Engineering B 77, 67 (2000).
8. E. H. Rhoderick, Metal-Semiconductor Contact (Clarendon Press, Oxford, 1978).
9. S. S. Kilchitskaya, T. S. Kilchitskaya and V. A. Skryshevsky, Thin Solid Films 346, 226 (1999).
10. V. I. Strikha, Theoretical Base of Metal-Semiconductor Contact (Naukova Dumka, Kiev, 1974).
11. M. Madheswaran and P. Chakrabarti, IEEE Proc. Optoelectron 143, 248 (1996).
12. P. Chakrabarti, B. R. Abraham, A. Dhingra, A. Das, B. S. Sharan and V. Maheshwari, IEEE Transaction on Electron Dev. 39, 507 (1992).