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Volumn 2, Issue 7, 2005, Pages 2659-2662
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Temperature-dependent microwave noise performances of AlGaN/GaN HEMTs with post-gate annealing
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ELECTRON MOBILITY;
LEAKAGE CURRENTS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
TRANSISTORS;
CUT-OFF FREQUENCY (FT);
MICROWAVE NOISE PERFORMANCES;
POST-GATE-ANNEALING (PGA);
TEMPERATURE DEPENDENCE;
MICROWAVES;
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EID: 27344456450
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200461510 Document Type: Conference Paper |
Times cited : (4)
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References (13)
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