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Volumn 2, Issue 7, 2005, Pages 2659-2662

Temperature-dependent microwave noise performances of AlGaN/GaN HEMTs with post-gate annealing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSISTORS;

EID: 27344456450     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461510     Document Type: Conference Paper
Times cited : (4)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.