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Volumn 330, Issue 2, 1998, Pages 139-145

The effect of geometrical misfit dislocation on formation of microstructure and photoluminescence of Wurtzite GaN/Al2O3 (0001) films grown by low pressure metal-organic chemical vapor deposition

(2) Kim, Keunjoo a Park, Choon Bae b

a OPTEL Semiconductor Corporation (South Korea)

b Wonkwang University (South Korea)

Author keywords

Nitrides; Optical properties; Organometallic vapor deposition; Transmission electron microscopy

Indexed keywords

ALUMINA; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHONONS; PHOTOLUMINESCENCE;

GEOMETRICAL MISFIT DISLOCATION; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION (LPCVD); WURTZITE FILMS;

OPTICAL FILMS;

EID: 0032157909 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00541-0 Document Type: Article

Times cited : (10)

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