Electrical characterization of Fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Agrawal, Ruchi ^a   Ghosh, Subhasis ^a  

^a JAWAHARLAL NEHRU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRODES; FERMI LEVEL; ORGANIC COMPOUNDS;

CURRENT INJECTION; METAL ELECTRODES; WORK FUNCTION;

INTERFACES (MATERIALS);

EID: 33751574251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2398930     Document Type: Article

References (17)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 270-279.
2. I. G. Hill, A. Rajagopal, A. Kahn, and Y. Hu, Appl. Phys. Lett. 73, 662 (1998).
3. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. (Weinheim, Ger.) 11, 605 (1999).
4. H. Peisert, M. Knupfer, and J. Fink, Appl. Phys. Lett. 81, 2400 (2002).
5. X. Crispin, V. Geskin, A. Crispin, J. Cornil, R. Lazzaroni, W. Salaneck, and J. L. Bredas, J. Am. Chem. Soc. 124, 8131 (2002).
6. W. Möonch, Appl. Phys. Lett. 88, 112116 (2006).
7. H. Ishii and K. Seki, IEEE Trans. Electron Devices 44, 1295 (1997).
8. A. Kahn, N. Koch, and W. Gao, J. Polym. Sci., Part B: Polym. Phys. 41, 2529 (2003).
9. C. Shen, A. Kahn, and J. Schwartz, J. Appl. Phys. 89, 449 (2001).
10. A. K. Mahapatro and S. Ghosh, Appl. Phys. Lett. 80, 4840 (2002).
11. I. G. Hill, J. Schwartz, and A. Kahn, Org. Electron. 1, 5 (2000).
12. C. Shen and A. Kahn, Org. Electron. 2, 89 (2001).
13. J. Ortega, R. Ṕrez, and A. Kahn, Appl. Surf. Sci. 234, 107 (2004).
14. P. S. Bagus, V. Staimmler, and C. Wöll, Phys. Rev. Lett. 89, 096104 (2002).
15. G. Witte, S. Lukas, P. S. Bagus, and C. Wöll, Appl. Phys. Lett. 87, 263502 (2005).
16. W. Osikowicz, M. P. de Jong, S. Braun, C. Tengstedt, M. Fahlman, and W. R. Salaneck, Appl. Phys. Lett. 88, 193504 (2006).
17. J. C. Scott and G. G. Malliaras, Chem. Phys. Lett. 299, 115 (1999).