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Volumn 105, Issue 6, 2009, Pages

Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state

Author keywords

[No Author keywords available]

Indexed keywords

A THERMALS; BLUE SHIFTS; BOTTOM LAYERS; CARRIER DEPLETIONS; DEEP DEFECTS; DEFECT STATE; EMISSION ENERGIES; EMISSION PROCESS; FIRST EXCITED STATE; GAAS; HIGH TEMPERATURES; INAS QUANTUM DOTS; INTER DIFFUSIONS; LOW TEMPERATURES; MISFIT DEFECTS; POST-GROWTH THERMAL ANNEALING; THERMAL EMISSIONS; THERMAL-ANNEALING; TUNNELING ENERGIES;

EID: 63749108772     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081654     Document Type: Article
Times cited : (4)

References (30)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.