Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots

Journal of Applied Physics

Volumn 99, Issue 1, 2006, Pages

  Chen, J F ^a   Hsiao, R S ^a   Hsieh, M F ^a   Wang, J S ^b   Chi, J Y ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPY; CAPACITANCE-VOLTAGE; INALAS LAYER; SELF-ASSEMBLED INAS QUANTUM DOTS; VALENCE BAND;

CAPACITANCE; ELECTRIC ADMITTANCE; ELECTRIC POTENTIAL; ELECTRON EMISSION; PHOTOLUMINESCENCE; SPECTROSCOPIC ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 30844466184     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150258     Document Type: Article

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