GaAs/n-AlGaAs field-effect transistor with embedded InAs quantum traps and its programmable threshold characteristics

Electronics Letters

Volumn 32, Issue 5, 1996, Pages 491-493

  Yusa, G ^a   Sakaki, H ^a  

^a NONE

Author keywords

Aluminium gallium arsenide; Field effect transistors; Gallium arsenide

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM ARSENIDE; ELECTRON CONCENTRATION; ELECTRON GAS; GATE VOLTAGE; HETEROINTERFACE; PROGRAMMABLE THRESHOLD; QUANTUM TRAPS; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0030084942     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960293     Document Type: Article

References (4)

1. LEONARD, D., KRISHNAMURTHY, M., REAVES, C.M., DENBAARS, S.P., and PETROFF, P.M.: 'Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surface', Appl. Phys. Lett., 1993, 63, pp. 3203-3205
2. MOISON. J.M., HOUZAY. F., BARTHE, F., LEPRINCE, L., ANDRE, E., and VATEL, O.: 'Self-organized growth of regular nanometer-scale InAs dots on GaAs', Appl. Phys. Lett., 1994, 64, pp. 196-198
3. SAKAKI, H., YUSA, G., SOMEYA, T., OHNO, Y., NODA, T., AKIYAMA, H., KADOYA. Y., and NOGE, H.: 'Transport properties of two-dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots', Appl. Phys. Lett., 1995, 67, pp. 3444-3446
4. DREXLER, H., LEONARD, D., HANSEN, W., KOTTHAUS, J.P., and PETROFF, P.M.: 'Spectroscopy of quantum levels in charge-tunable InGaAs quantum dots', Phys. Rev. Lett., 1994, 73, p. 2252