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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 8, 2002, Pages 853261-853266

Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots

(10) Brunkov, P N a Patane A a Levin, A a Eaves, L a Main, P C a Musikhin, Yu G b Volovik, B V b Zhukov, A E b Ustinov, V M b Konnikov, S G b

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM ARSENIDE; INDIUM;

ARTICLE; CHEMICAL COMPOSITION; CHEMICAL STRUCTURE; DEVICE; ELECTRIC POTENTIAL; ELECTRON; LIGHT ABSORPTION; PHOTOLUMINESCENCE; PHOTON; QUANTUM MECHANICS; SPECTROSCOPY; TEMPERATURE SENSITIVITY;

EID: 4243551105 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (39)

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