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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 9 AB, 2004, Pages

Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealing

(6) Chen, Jenn Fang a Hsiao, Ru Shang a Shih, Shen Hung a Wang, Pai Yong b Wang, Jyh Shyang b Chi, Jim Y b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

Annealing; Deep level transient spectroscopy; Defect traps; InAs GaAs quantum dots

Indexed keywords

LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

BLUESHIFT; DEFECT TRAPS; QUANTUM CONFINEMENT EFFECT; TRAPPING SIGNALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 9144268612 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1150 Document Type: Article

Times cited : (11)

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