Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Chen, J F ^a   Hsiao, R S ^a   Huang, W D ^a   Wu, Y H ^a   Chang, L ^a   Wang, J S ^b   Chi, J Y ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; DISLOCATIONS (CRYSTALS); INDIUM ALLOYS; SELF ASSEMBLY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER DEPLETION; DEFECT TRAPS; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745018096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2212064     Document Type: Article

References (16)

1. F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, and D. Bimberg, Appl. Phys. Lett. 71, 22 (1997).
2. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
3. S. Guha, A. Madhukar, and K. C. Rajkumar, Appl. Phys. Lett. 57, 2110 (1990).
4. C. W. Snyder, J. F. Mansfield, and B. G. Orr, Phys. Rev. B 46, 9551 (1992).
5. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
6. J. F. Chen, R. S. Hsiao, Y. P. Chen, J. S. Wang, and J. Y. Chi, Appl. Phys. Lett. 87, 141911 (2005).
7. J. S. Wang, J. F. Chen, J. L. Huang, P. Y. Wang, and X. J. Guo, Appl. Phys. Lett. 77, 3027 (2000).
8. X. Yang, M. J. Jurlovic, J. B. Heroux, and W. I. Wang, Appl. Phys. Lett. 75, 178 (1999).
9. J. C. Harmand, L. H. Li, G. Patriarche, and L. Travers, Appl. Phys. Lett. 84, 3981 (2004).
10. T. Matsuura, T. Miyamoto, T. Kageyama, M. Ohta, Y. Matsui, T. Furuhata, and F. Koyama, Jpn. J. Appl. Phys., Part 2 43, L605 (2004).
11. K. Suzuki and Y. Arakwa, Phys. Status Solidi B 224, 139 (2001).
12. J. F. Chen, R. S. Hsiao, S. H. Shih, P. Y. Wang, J. S. Wang, and J. Y. Chi, Jpn. J. Appl. Phys., Part 2 43, L1150 (2004).
13. J. F. Chen, R. S. Hsiao, C. K. Wang, J. S. Wang, and J. Y. Chi, J. Appl. Phys. 98, 013716 (2005).
14. T. Wosinski, J. Appl. Phys. 65, 1566 (1989).
15. H. Beneking, P. Narozny, and N. Emeis, Appl. Phys. Lett. 47, 828 (1985).
16. P. A. Kirkby, IEEE J. Quantum Electron. QE11, 562 (1975).