Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

Applied Physics Letters

Volumn 87, Issue 14, 2005, Pages 1-3

  Chen, J F ^a   Hsiao, R S ^a   Chen, Y P ^a   Wang, J S ^b   Chi, J Y ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; PHOTOLUMINESCENCE; STRAIN RATE;

PL SPECTRA; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 28344452832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2081132     Document Type: Article

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