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Volumn 33, Issue 15, 1997, Pages 1337-1339

Quantum dot resonant cavity photodiode with operation near 1.3μm wavelength

Author keywords

Photodiodes; Semiconductor quantum dots

Indexed keywords

BANDWIDTH; INTEGRATED OPTOELECTRONICS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EID: 0031186313     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970906     Document Type: Article
Times cited : (68)

References (6)
  • 1
    • 0000933523 scopus 로고
    • Long-wavelength (1.3μm) luminescence in InGaAs strained quantum-well structures grown on GaAs
    • ROAN, E., and CHENG, K.: 'Long-wavelength (1.3μm) luminescence in InGaAs strained quantum-well structures grown on GaAs', Appl. Phys. Lett., 1991, 59, pp. 2688-2690
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 2688-2690
    • Roan, E.1    Cheng, K.2
  • 2
    • 0029509799 scopus 로고
    • 1.3μm photoluminescence from InGaAs quantum dots on GaAs
    • MIRIN, R., IBBETSON, J., NISHI, K., GOSSARD, A., and BOWERS, J.: '1.3μm photoluminescence from InGaAs quantum dots on GaAs', Appl. Phys. Lett., 1995, 67, pp. 3795-3797
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 3795-3797
    • Mirin, R.1    Ibbetson, J.2    Nishi, K.3    Gossard, A.4    Bowers, J.5
  • 3
    • 0001101497 scopus 로고    scopus 로고
    • Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck
    • MUKAI, K., OHTSUKA, N., SHOJI, H., and SUGAWARA, M.: 'Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck', Appl. Phys. Lett., 1996, 68, pp. 3013-3015
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 3013-3015
    • Mukai, K.1    Ohtsuka, N.2    Shoji, H.3    Sugawara, M.4
  • 4
    • 0001628467 scopus 로고    scopus 로고
    • High photoluminescence efficency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique
    • MUKAI, K., OHTSUKA, N., and SUGAWARA, M.: 'High photoluminescence efficency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique', Appl. Phys. Lett., 1997, 70, pp. 2416-2418
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2416-2418
    • Mukai, K.1    Ohtsuka, N.2    Sugawara, M.3
  • 5
    • 0026121018 scopus 로고
    • Enhancement of quantum-efficiency in thin photodiodes through absorptive resonance
    • CHIN, A., and CHANG, T.Y.: 'Enhancement of quantum-efficiency in thin photodiodes through absorptive resonance', J. Lightwave Technol., 1991, 9, pp. 321-328
    • (1991) J. Lightwave Technol. , vol.9 , pp. 321-328
    • Chin, A.1    Chang, T.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.