Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Zhang, X ^a   Skowronski, M ^a   Liu, K X ^b   Stahlbush, R E ^b   Sumakeris, J J ^c   Paisley, M J ^c   O'Loughlin, M J ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEGRADATION; EPILAYERS; NUCLEATION; PHOTOLUMINESCENCE; SUBSTRATES;

BASAL PLANE DISLOCATIONS (BPD); BIPOLAR DEVICES; INTERFACIAL DISLOCATION;

SILICON;

EID: 36248936522     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2809343     Document Type: Article

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