Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Stahlbush, R E ^a   Vanmil, B L ^a   Myers Ward, R L ^a   Lew, K K ^a   Gaskill, D K ^a   Eddy, C R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL LAYERS; GROWTH (MATERIALS); PROPANE; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE;

BASAL PLANE DISLOCATIONS; EX-SITU; GROWTH INTERRUPTIONS; IN-SITU; IN-SITU GROWTHS; ON WAFERS; THREADING EDGE DISLOCATIONS; ULTRAVIOLET PHOTOLUMINESCENCES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59349117712     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3070530     Document Type: Article

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