Yield and fracture properties of the wide band-gap semiconductor 4H-SiC

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3279-3290

  Pirouz, P ^a   Zhang, M ^a   Demenet, J L ^b   Hobgood, H M ^c  

^a Case Western Reserve University   (United States)

^b CNRS   (France)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSION TESTING; DEFORMATION; DISLOCATIONS (CRYSTALS); ENERGY GAP; FRACTURE; MICROSTRUCTURE; PLASTIC FLOW; SILICON CARBIDE; STRAIN RATE; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; YIELD STRESS;

MULTIPLICATIVE GENERATION;

SEMICONDUCTOR MATERIALS;

EID: 0037445060     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555255     Document Type: Article

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