Evolution of basal plane dislocations during 4H-SiC epitaxial growth

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 317-320

  Stahlbush, R E ^a   VanMil, B L ^a   Liu, K X ^a   Lew, K K ^a   Myers Ward, R L ^a   Gaskill, D K ^a   Eddy, C R ^a   Zhang, X ^b   Skowronski, M ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Basal plane dislocations; BPD; BPD reduction; Dislocation glide; Half loop array

Indexed keywords

EDGE DISLOCATIONS; FLOW OF GASES; SILICON CARBIDE;

BASAL PLANE DISLOCATION; BASAL PLANE DISLOCATION REDUCTION; BASAL PLANES; BASAL-PLANES; DISLOCATION GLIDE; DISLOCATION REDUCTION; HALF-LOOP ARRAYS; PLANE DISLOCATION;

EPITAXIAL GROWTH;

EID: 59349106141     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.317     Document Type: Conference Paper

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