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Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 295-298

Whole-wafer mapping of dislocations in 4H-SiC epitaxy

(4) Stahlbush, R E a Liu, K X a Zhang, Q b Sumakeris, J J b

a NAVAL RESEARCH LABORATORY (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

BPD; Dislocations; Epitaxial layer; Photoluminescence; PL imaging; Wafer mapping

Indexed keywords

ARGON LASERS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EPITAXIAL LAYERS; INFRARED DEVICES; MAPPING; NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; SILICON CARBIDE;

ARGON-ION LASER; BASAL PLANE DISLOCATION (BPDS); EXTENDED DEFECT; MULTIPLE IMAGE; NEAR INFRARED LIGHT; NON-DESTRUCTIVE TECHNIQUE; PROBE STATIONS; THREADING DISLOCATION;

SILICON WAFERS;

EID: 36249032344 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.556-557.295 Document Type: Conference Paper

Times cited : (59)

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