A simple index to restrain abnormal protrusions in films fabricated using CD under diffusion-limited conditions

Chemical Vapor Deposition

Volumn 10, Issue 4, 2004, Pages 221-228

  Kajikawa, Yuya ^a   Noda, Suguru ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Protrusion; Silicon carbide; Surface morphology; Surface roughness

Indexed keywords

ANISOTROPY; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; FABRICATION; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL);

DENSE FILMS; MATERIALS PROCESSING; PROTRUSION;

THIN FILMS;

EID: 6344249380     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200306285     Document Type: Article

References (43)

1. Y. Kajikawa, H. Ono, S. Noda, H. Komiyama, Chem. Vap. Deposition . 2002, 5, 52.
2. S. Noda, Y. Kajikawa, H. Komiyama, Chem. Vap. Deposition 2002, 8, 87.
3. X.-D. Liu, H. Funakubo, S. Noda, H. Komiyama, Chem. Vap. Deposition 2001, 7, 253.
4. X.-D. Liu, H. Funakubo, S. Noda, H. Komiyama, J. Electrochem. Soc. 2001, 148, C227.
5. Y. J. Liu, H. J. Kim, T. Takeuchi, Y. Egashira, H. Kimura, H. Komiyama, J. Am. Ceram. Soc. 1996, 79, 1109.
6. C. H. J. Van den Brekel, J. Bloem, Philips Res. Rep. 1977, 32, 134.
7. J. Chin, P. K. Gantzel, R. G. Hudson, Thin Solid Films 1977, 40, 57.
8. K. Minato, K. Fukuda, J. Mater. Sci. 1988, 23, 699.
9. M. G. So, J. S. Chun, J. Vac. Sci. Technol., A 1988, 6, 5.
10. A. Parretta, A. Camanzi, G. Giunta, A. Mazzarano, J. Mater. Sci. 1991, 26, 6057.
11. C. H. Chu, Y. M. Lu, M. H. Hon, J. Mater. Sci. 1992, 27, 3883.
12. K. H. Yoon, J. Desmaison, Surf. Coat. Technol. 1993, 56, 243.
13. E. Henry, P. Marti, Y. Casaux, C. Comberscure, A. Figueras, V. Madigou, R. R. Clemente, A. Mazel, J. Sevely, B. Armas, J. Phys. IV 1993, C3, 329.
14. C. H. Chu, M. H. Hon, J. Ceram. Soc. Jpn. 1993, 101, 95.
15. X. Tang, R. Haubner, B. Lux, A. Zechmann, E. Henge, J. Phys. IV 1995, C5, 777.
16. I. Y. Konyashin, Chem. Vap. Deposition 1996, 2, 199.
17. M. Mukaida, T.Goto, T. Hirai, J. Mater. Sci. 1990, 25, 1069.
18. Y. J. Liu, H. J. Kim, Y. Egashira, H. Kimura, H. Komiyama, J. Am. Ceram. Soc. 1996, 79, 1335.
19. H. Itoh, H. Morinaka, K. Sugiyama, J. Cryst. Growth 1989, 94, 387.
20. H. Hartmann, L. Hildisoh, E. Krause, W. Mohling, J. Mater. Sci. 1991, 26, 4917.
21. K. V. Ravi, .J. Mater. Res. 1992, 7, 384.
22. W. W.Mullins,R. F. Sekerka, J. Appl. Phys. 1963, 34, 323.
23. W. W. Mullins, R. F. Sekerka, J. Appl. Phys. 1964, 35, 444.
24. C. H. J. Van den Brekel, A. K. Jansen, J. Cryst. Growth 1978, 43, 364.
25. B. J. Palmer, R. G. Gordon, Thin Solid Films 1988, 758, 313.
26. B. J. Palmer, R. G. Gordon, Thin Solid Films 1989, 177, 141.
27. G. S. Bales, A. C. Redfield, A. Zangwill, Phys. Rev. Lett. 1989, 62, 776.
28. H. J. Oh, S. W. Rhee, I. S. Kang, J. Electrochem. Soc. 1992, 139, 1714.
29. H. J. Viljoen, J. J. Thiart, V. Hlavacek, AIChE J. 1994, 40, 1032.
30. P. Mahalingam, D. S. Dandy, Diamond Relat. Mater. 1997, 6, 1759.
31. P. Mahalingam, D. S. Dandy, J. Appl. Phys. 1998, 83, 6061.
32. C. C. Hwang, H. Y. Yang, J. Y. Hsieh, Y. M. Dai, Thin Solid Films 1997, 304, 371.
33. J. J. Thiart, V. Hlavacek, AIChE J. 1995, 41, 1926.
34. J. J. Thiart, V. Hlavacek, H. J. Viljoen, Thin.Solid Films 2000, 365, 275.
35. J. J. Thiart, D. Orlicki, V. Hlavacek, Chem. Eng. Commun. 1996, 152-153, 189.
36. G. S. Bales, R. Bruinsma, E. A. Eklund, R. P. U. Karunasiri, J. Rud-nick, A. Zangwill Science 1990, 249, 264.
37. T. Takeuchi, Y. Egashira, T. Osawa, H. Komiyama, J. Electrochem. Soc. 1998, 145, 1277.
38. E. Pearson, T. Takai, T. Halicioglu, W. A. Tiller, J. Cryst. Growth 1984, 70, 33.
39. W. W. Mullins, J. Appl. Phys. 1957, 28, 333.
40. P. Jensen, Rev. Mod. Phys. 1999, 77, 1695.
41. D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, D. C. Jacobson, Phys. Rev. Lett. 1993, 70, 1643.
42. Y.-W. Mo, J. Kleiner, M. B. Webb, M. G. Lagally, Surf. Sci. 1992, 208, 275.
43. J. T. Drotar, Y.-P. Zhao, T.-M. Lu, G.-C. Wang, Phys. Rev. B 2001, 64, 125411.