Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

Chemical Vapor Deposition

Volumn 8, Issue 3, 2002, Pages 87-89

  Noda, Suguru ^a   Kajikawa, Yuya ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; DIAMONDS; EPITAXIAL GROWTH; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CONE STRUCTURE FORMATION; DIAMOND PARTICLES; EPITAXIAL SILICON FILMS; RANDOM NUCLEATION;

CONES;

EID: 0040076451     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3862(20020503)8:3<87::AID-CVDE87>3.0.CO;2-Q     Document Type: Article

References (10)

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