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Volumn 45, Issue 4-5, 2009, Pages 435-443

Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM

Author keywords

AFM; Cathodoluminescence; GaN; Leakage current; Manganese doping

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CONCENTRATION (PROCESS); CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRON BEAMS; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; MANGANESE COMPOUNDS; SEMICONDUCTING GALLIUM;

EID: 62949217555     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.023     Document Type: Article
Times cited : (9)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.