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Journal of Crystal Growth

Volumn 261, Issue 1, 2004, Pages 50-54

Formation of V-shaped pits in GaN thin films grown on high temperature GaN

(6) Son, Kwang Suk a Kim, Dong Gyu a Cho, Hyung Koun a Lee, Kyuhan b Kim, Sunwoon b Park, Keunseop b

a Dong A University (South Korea)

b Optronix Inc (South Korea)

Author keywords

A1. Si doping; A1. Transmission electron microscopy; A1. V pits; B1. GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); FILM GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON; SURFACE PHENOMENA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HOMOJUNCTION STRUCTURES; SURFACE PITS;

GALLIUM NITRIDE;

EID: 0344740585 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.08.075 Document Type: Article

Times cited : (36)

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