Optical properties and defect structure of MOVPE InGaN films

Materials Research Society Symposium - Proceedings

Volumn 588, Issue , 2000, Pages 81-86

  Cremades, A ^a   Albrecht, M ^b   Ulloa, J M ^a   Piqueras, J ^a   Strunk, H P ^b   Hanser, D ^c   Davis, R F ^c  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; RESIDUAL STRESSES; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INDIUM GALLIUM NITRIDE FILMS; REFLECTANCE SPECTROMETRY;

THICK FILMS;

EID: 0033688630     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Z. Liliental-Weber, Y. Chen, S. Ruvimov, J. Washburn, Phys. Rev. Lett. 79, 2835 (1997)
2. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, S. Y. Wang, Appl. Phys. Lett. 72, 710 (1998)
3. D. Vanderbilt, L. K. Wickham, Mater. Res. Soc. Symp. Proc. 202, 555 (1991)
4. B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H. P. Strunk, D. Hanser, and R. F. Davis, MRS Internet J. Nitride Semicond. Res. 3, 39 (1998)
5. B. Jahnen, Diplomarbeit, Erlangen University (1998) and B. Jahnen, S. Christiansen, M. Albrecht, (unpublished).
6. J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, Phys. Rew. B 57, R9435 (1998)