Growth and characterization of GaN:Mn epitaxial films

Journal of Applied Physics

Volumn 93, Issue 12, 2003, Pages 9697-9702

  Graf, T ^a   Gjukic, M ^a   Hermann, M ^a   Brandt, M S ^a   Stutzmann, M ^a   Gorgens L ^b   Philipp, J B ^c   Ambacher, O ^d  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c WALTHER MEISSNER INSTITUT   (Germany)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; GALLIUM NITRIDE; LIGHT ABSORPTION; MAGNETIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OXIDATION; PARAMAGNETIC RESONANCE; SQUIDS;

ELASTIC RECOIL DETECTION;

SEMICONDUCTING FILMS;

EID: 0038803831     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577811     Document Type: Article

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