An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Saenger, K L ^a   Fogel, K E ^a   Ott, J A ^a   Sadana, D K ^a   Yin, H ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; GROWTH RATE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SINGLE CRYSTALS;

COMPLEX TIME EVOLUTION; FACET FORMATION; REGROWTH BEHAVIOR; SOLID PHASE EPITAXY;

AMORPHOUS SILICON;

EID: 34249904918     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736343     Document Type: Article

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