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Volumn 105, Issue 5, 2009, Pages

Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N2 and H 2 atmospheres

(10) Lin, Chia Hung a Uen, Wu Yih a Lan, Shan Ming a Huang, Yen Chin a Liao, Sen Mao a Li, Zhen Yu b Yang, Tsun Neng c Ku, Chien Te c Chen, Meng Chu c Huang, Yu Hsiang c

a CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c INSTITUTE OF NUCLEAR ENERGY RESEARCH (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; BOND STRENGTH (CHEMICAL); CHEMICAL VAPOR DEPOSITION; ELECTRODEPOSITION; EMISSION SPECTROSCOPY; FABRICATION; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; LUMINESCENCE; NITRIDES; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS; SILICON; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; VAPORS;

AMBIENT GAS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITIONS; FOURIER-TRANSFORM INFRARED SPECTROSCOPIES; HIGH ENERGY BANDS; HIGH RESOLUTIONS; LUMINESCENCE BANDS; LUMINESCENCE MECHANISMS; NAKED EYES; NITRIDE FILMS; PHOTOLUMINESCENCE MEASUREMENTS; PL SPECTRUM; QUANTUM CONFINEMENT EFFECTS; SI QUANTUM DOTS; SURFACE STATE; TRANSMISSION ELECTRONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 62549164318 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3086620 Document Type: Article

Times cited : (9)

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