Effect of hydrogen on SiNx films deposited by Cat-CVD method

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 615-617

  Fujinaga, Tetsushi ^a   Takagi, Makiko ^a   Hashimoto, Masanori ^a   Asari, Shin ^a   Saito, Kazuya ^a  

^a ULVAC INC   (Japan)

Author keywords

Cat CVD; Dielectric breakdown; Hydrogen radical; Silicon nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; LOW TEMPERATURE EFFECTS; RELIABILITY THEORY; SILICON NITRIDE;

HYDROGEN RADICALS; PLASMA DAMAGE; SOURCE GASES;

THIN FILMS;

EID: 36749036634     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.219     Document Type: Article

References (4)

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2. Higashiwaki M., Hirose N., and Matsui T. IEEE electron device lett. 26 (2005) 139
3. Holt J.K., et al. Extended Abstract of the 2nd Int'l Conf. on Cat-CVD(Hot-Wire CVD) Process (2002), NREL/cp-520-30476, Denver, CO USA 133
4. Izumi A., et al. Microelectronic Engineering vol. 51-52 (2000), Elsevier Science B.V. 495