Fabrication of whitely luminescent silicon-rich nitride films by atmospheric pressure chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4696-4699

  Lin, Chia Hung ^a   Uen, Wu Yih ^a   Huang, Yen Chin ^a   Li, Zhen Yu ^c   Liao, Sen Mao ^a   Yang, Tsun Neng ^b   Lan, Shan Ming ^b   Huang, Yu Hsiang ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AP HCVD; HRTEM; Si QDs; SiNx films

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERICS; CHEMICAL VAPOR DEPOSITION; CLIMATOLOGY; DEPOSITION; ELECTROMAGNETIC WAVES; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; METEOROLOGY; MICROSCOPIC EXAMINATION; NITRIDES; OPTICAL PROPERTIES; SILICON NITRIDE; VAPORS;

AP-HCVD; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITIONS; CARRIER GASES; CHAMBER PRESSURES; CRYSTALLINE SIS; DEPOSITION TEMPERATURES; DEPOSITION TIMES; DOT DENSITIES; DOT SIZES; HIGH-RESOLUTION; HRTEM; LUMINESCENCE BANDS; LUMINESCENCE MECHANISMS; LUMINESCENT SILICONS; NAKED EYES; NITRIDE FILMS; PHOTOLUMINESCENCE MEASUREMENTS; RADIATIVE LIFETIMES; RANGING; SI SUBSTRATES; SI-QDS; SINX FILMS; SOURCE MATERIALS; TIME-RESOLVED;

SILICON;

EID: 55049125816     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4696     Document Type: Article

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