Designing, fabrication and characterization of power amplifiers based on 10-watt SiC MESFET & GaN HEMT at microwave frequencies

Proceedings of the 38th European Microwave Conference, EuMC 2008

Volumn , Issue , 2008, Pages 444-447

  Azam, S ^a   Jonsson, R ^b   Wahab, Q ^a,b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; LIGHT AMPLIFIERS; MESFET DEVICES; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS; SILICON CARBIDE;

CLASS-AB POWER AMPLIFIERS; DRAIN BIAS; FABRICATION AND CHARACTERIZATIONS; MAXIMUM OUTPUT POWER; MEASURED RESULTS; POWER GAINS; SIC MESFET; SINGLE STAGE;

SILICON COMPOUNDS;

EID: 62349118115     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMC.2008.4751484     Document Type: Conference Paper

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