C-band GaN HEMT power amplifier with 220W output power

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1251-1254

  Yamanaka, K ^a   Mori, K ^a   Iyomasa, K ^a   Ohtsuka, H ^a   Noto, H ^a   Nakayama, M ^a   Kamo, Y ^a   Isota, Y ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

High voltage techniques; MODFET power amplifiers; Pulse measurements

Indexed keywords

FREQUENCY BANDS; GALLIUM NITRIDE; HEAT RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH-VOLTAGE TECHNIQUES; MOSFET POWER AMPLIFIERS; POWER DENSITY; PULSE MEASUREMENTS;

POWER AMPLIFIERS;

EID: 34548021949     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380395     Document Type: Conference Paper

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