High-efficiency ultra-wideband power amplifier in GaN technology

Electronics Letters

Volumn 44, Issue 2, 2008, Pages 130-131

  Colantonio, P ^a   Giannini, F ^a   Giofre R ^a   Piazzon, L ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND NETWORKS; DRAIN CURRENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

DRAIN EFFICIENCY; GATE PERIPHERY; OUTPUT POWER;

POWER AMPLIFIERS;

EID: 38649125567     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083067     Document Type: Article

References (6)

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2. Prasad, S.N., and Amir, S.I.: ' Design guidelines for a novel tapered drain line distributed power amplifier ', 36th, European Microwave Conf., Manchester, UK, September, 2006
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6. Cripps, S.C.: ' RF power amplifiers for wireless communications ', (Artech House, 1999)