Single-stage, high , 26-watt power amplifier using SiC LE-MESFET

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 1, Issue , 2006, Pages 441-444

  Azam, Sher ^a   Jonsson, R ^b   Wahab, Q ^a,b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

High efficiency; MESFET; Power amplifier; Silicon carbide (SiC); Single stage; Stability

Indexed keywords

BROADBAND AMPLIFIERS; CONTROL THEORY; CRYSTAL GROWTH; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; MICROFLUIDICS; MICROWAVES; MOLECULAR BEAM EPITAXY; POWER AMPLIFIERS; SILICON CARBIDE;

ASIA PACIFIC; CONFERENCE PROCEEDINGS; DRAIN BIAS; FREQUENCY RANGING; GATE WIDTHS; NEGATIVE FEEDBACK (NFB); OUTPUT POWERS; POWER GAINS; POWER-ADDED EFFICIENCY (PAE); SINGLE STAGE;

FEEDBACK;

EID: 44849089449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2006.4429458     Document Type: Conference Paper

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