Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 7, 2005, Pages 2441-2448

  Sayed, Ahmed ^a   Boeck, Georg ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

MESFET; Silicon carbide; Table based model; Two stage power amplifier (PA)

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC LINES; ELECTRIC TRANSFORMERS; FREQUENCIES; MATHEMATICAL MODELS; POWER AMPLIFIERS; SIGNAL PROCESSING; SILICON CARBIDE;

FREQUENCY BAND; TABLE-BASED MODEL; TWO-STAGE POWER AMPLIFIER (PA); WIDE-BANDGAP SEMICONDUCTORS;

MESFET DEVICES;

EID: 23144466877     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.850404     Document Type: Article

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