High-efficiency Class-F GaN HEMT amplifier with simple parasitic- compensation circuit

IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 1, 2008, Pages 55-57

  Lee, Yong Sub ^b   Lee, Mun Woo ^b   Jeong, Yoon Ha ^a,b  

^a IEEE

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Class F power amplifier (PA); Efficiency; Harmonic; Transmission line (TL)

Indexed keywords

CAPACITORS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC INDUCTORS; ELECTRIC LINES; GAIN MEASUREMENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

CLASS-F POWER AMPLIFIERS (PA); DRAIN EFFICIENCY; HARMONIC TUNERS; SERIES CAPACITORS; SHUNT INDUCTORS;

POWER AMPLIFIERS;

EID: 38149129977     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2007.912023     Document Type: Article

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