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Volumn 49, Issue 6, 2007, Pages 1447-1449

A high-efficiency class-E power amplifier using SiC mesfet

Author keywords

Class E; Harmonic termination; PAE; Power amplifier; SiC MESFET

Indexed keywords

GAIN MEASUREMENT; HARMONIC DISTORTION; HARMONIC GENERATION; MESFET DEVICES; PATTERN MATCHING; SILICON CARBIDE;

EID: 34248149980     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.22455     Document Type: Article
Times cited : (9)

References (8)
  • 3
    • 0033280270 scopus 로고    scopus 로고
    • An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor
    • H. Zirath and D.B. Rutledge, An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor, IEEE Trans Microwave Theory Tech 47 (1999), 2534-2538.
    • (1999) IEEE Trans Microwave Theory Tech , vol.47 , pp. 2534-2538
    • Zirath, H.1    Rutledge, D.B.2
  • 4
    • 0002693166 scopus 로고    scopus 로고
    • Transmission-line load-network topology for class-E power amplifiers
    • A.J. Wilkinson and J.K.A. Everard, Transmission-line load-network topology for class-E power amplifiers, IEEE Trans Microwave Theory Tech 49 (2001), 1202-1210.
    • (2001) IEEE Trans Microwave Theory Tech , vol.49 , pp. 1202-1210
    • Wilkinson, A.J.1    Everard, J.K.A.2
  • 8
    • 33847280581 scopus 로고    scopus 로고
    • An Empirical Large Signal Model for Silicon Carbide MESFETs
    • A. Sayed and G. Boeck, An Empirical Large Signal Model for Silicon Carbide MESFETs, 35th Eur Microwave Conf (2005), 313-316.
    • (2005) 35th Eur Microwave Conf , pp. 313-316
    • Sayed, A.1    Boeck, G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.