Designing of high efficiency power amplifier based on physical model of SiC MESFET in TCAD

Proceedings of International Bhurban Conference on Applied Sciences and Technology, IBCAST

Volumn , Issue , 2007, Pages 40-43

  Azam, Sher ^a   Svensson, C ^a   Wahab, Q ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Class C; MESFET; New technique; Power amplifier; Silicon carbide (SiC)

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; POWER AMPLIFIERS;

CLASS-C; DUTY CYCLES; HIGH EFFICIENCY POWER AMPLIFIERS; MESFET; NEW TECHNIQUE; PHYSICAL MODELS; POWER ADDED EFFICIENCIES; POWER DENSITIES; POWER GAINS; POWER LOSSES; PULSE INPUTS; SIC MESFET;

SILICON CARBIDE;

EID: 47749100799     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IBCAST.2007.4379905     Document Type: Conference Paper

References (9)

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