Surface modification of Mg Al2 O4 (111) for growth of high-quality ZnO epitaxial films

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Zeng, Z Q ^a   Liu, Y Z ^a   Yuan, H T ^a   Mei, Z X ^a   Du, X L ^a   Jia, J F ^b   Xue, Q K ^b   Zhang, Z ^c  

^a INSTITUTE OF PHYSICS   (China)

^b TSINGHUA UNIVERSITY   (China)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

DEFECT DENSITY; EPITAXIAL FILMS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; POLARITY CONTROL;

CRYSTALLINE MATERIALS;

EID: 33847196047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2679171     Document Type: Article

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